PART |
Description |
Maker |
VIO125-12P1 VID125-12P1 VDI125-12P1 |
IGBT Modules: Boost Configurated IGBT Modules IGBT Modules 138 A, 1200 V, N-CHANNEL IGBT
|
IXYS[IXYS Corporation] IXYS, Corp.
|
VID160-12P1 VIO160-12P1 VDI160-12P1 |
IGBT Modules: Boost Configurated IGBT Modules IGBT Modules in ECO-PAC 2
|
IXYS[IXYS Corporation]
|
M57959 M57959L |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V From old datasheet system HYBRID IC FOR DRIVING IGBT MODULES
|
MITSUBISHI[Mitsubishi Electric Semiconductor] ETC Mitsubishi Electric Corporation
|
MID400-12E4T |
IGBT Modules: Boost Configurated IGBT Modules
|
IXYS
|
VID25-12P1 |
IGBT Modules: Boost Configurated IGBT Modules
|
IXYS
|
VUB50-16PO1 |
Power Modules/Rectifier Bridge Modules: Three Phase Bridges with Dynamic Brake IGBT
|
IXYS
|
RM60CZ-2H RM60DZ-2H RM60CZ-H RM60DZ-H RM60DZ-M RM6 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
CM100DU-34KA09 |
IGBT MODULES HIGH POWER SWITCHING USE 100 A, 1700 V, N-CHANNEL IGBT
|
Mitsubishi Electric Semiconductor
|
SEMIX553GAR128D SEMIX553GAL128D |
SPT IGBT Modules 540 A, 1200 V, N-CHANNEL IGBT
|
SEMIKRON
|
SEMIX151GAR12T4S |
Trench IGBT Modules 230 A, 1200 V, N-CHANNEL IGBT
|
SEMIKRON
|
SEMIX101GD126HDS08 |
Trench IGBT Modules 130 A, 1200 V, N-CHANNEL IGBT
|
Semikron International
|